| PART |
Description |
Maker |
| F4655-1305 |
High-Speed Response MCP Assembly Ideal for High Resolution TOF-MS Detector Incorporates a Two-Stage MCP with 4 μm Channel Diameter
High-Speed Response MCP Assembly Ideal for High Resolution TOF-MS Detector Incorporates a Two-Stage MCP with 4 レm Channel Diameter
|
Hamamatsu Corporation
|
| M6MGT647M17AKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| M6MGD137W34DKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| M6MGT331S4BKT M6MGB331S4BKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| F2223-21SH |
MCP ASSEMBLY
|
Hamamatsu Photonics
|
| F12396-11 |
COMPACT MCP ASSEMBLY SERIES
|
Hamamatsu Corporation
|
| F2224-11M F2224-11P F2224-11S F2224-14 F2224-14M F |
Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics
|
Hamamatsu Corporation
|
| DS42553 AM29DL323D |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
MCP Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
|
| AM49DL320BGB701T AM49DL320BGT701T AM49DL320BGT701S |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous 堆叠式多芯片封装（MCP）闪存和SRAM2兆位个M × 8 2米x 16位）.0伏的CMOS只，同时
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous 堆叠式多芯片封装（MCP）闪存和SRAM2兆位4个M × 8 2米x 16位）.0伏的CMOS只，同时
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion, Inc.
Spansion Inc.
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| SDA356JUF SDA276B SDA276C SDA276D SDA276E SDA276G |
600 V, 1 A fast and ultra fast rectifier assembly
100 V, 1.5 A bridge rectifier assembly
200 V, 1.5 A bridge rectifier assembly
400 V, 1.5 A bridge rectifier assembly
600 V, 1.5 A bridge rectifier assembly
1000 V, 1.5 A bridge rectifier assembly
1500 V, 1.5 A bridge rectifier assembly
800 V, 1 A fast and ultra fast rectifier assembly
1200 V, 1 A fast and ultra fast rectifier assembly
400 V, 1 A fast and ultra fast rectifier assembly
|
Solid State Devices Inc
|
| KA100O015E-BJTT |
MCP Specification
|
Samsung semiconductor
|
| K5A3380YTC-T755 K5A3380YBC-T755 K5A3280YTC-T855 K5 |
MCP MEMORY
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
